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SM6T Series
New Product
Vishay Semiconductors
formerly General Semiconductor
Surface Mount TRANSZORB(R) Transient Voltage Suppressors
DO-214AA (SMBJ)
Cathode Band
Breakdown Voltage 6.8 to 220V Peak Pulse Power 600W
0.086 (2.20) 0.077 (1.95)
0.155 (3.94) 0.130 (3.30)
Mounting Pad Layout
0.106 MAX (2.69 MAX)
0.180 (4.57) 0.160 (4.06)
0.012 (0.305) 0.006 (0.152)
0.083 MIN (2.10 MIN) 0.050 MIN (1.27 MIN) 0.220 REF
0.096 (2.44) 0.084 (2.13)
Dimensions in inches and (millimeters)
0.060 (1.52) 0.030 (0.76) 0.220 (5.59) 0.205 (5.21)
0.008 (0.203) Max.
Mechanical Data
Case: JEDEC DO-214AA (SMB) molded plastic over passivated junction Terminals: Solder plated, solderable per MIL-STD-750, Method 2026 Polarity: For uni-directional types the band denotes the cathode, which is positive with respect to the anode under normal TVS operation Standard Packaging: 12mm tape (EIA STD RS-481) Weight: 0.003 ounces, 0.093 grams Packaging Codes - Options (Antistatic): 51 - 2K per Bulk box, 20K/carton 52 - 750 per 7" plastic Reel (12mm tape), 15K/carton 5B - 3.2K per 13" plastic Reel (12mm tape), 32K/carton
Features
* Low profile package with built-in strain relief for surface mounted applications * Glass passivated junction * Low inductance * Excellent clamping capability * Repetition rate (duty cycle): 0.01% * Fast response time: theoretically (with no parisitic inductance) less than 1ps from 0 Volts to V(BR) for unidirectional and 5ns for bidirectional types * High temperature soldering: 250C/10 seconds at terminals * Plastic package has Underwriters Laboratory Flammability Classificaion 94V-0
Maximum Ratings & Thermal Characteristics Ratings at 25C ambient temperature unless otherwise specified.
Parameter Peak pulse power dissipation on 10/1000s waveform(1)(2) (Fig. 1) Peak pulse current with a 10/1000s waveform(1) Power dissipation on infinite heatsink, TA = 50C Peak forward surge current 10ms single half sine-wave uni-directional only (2) Thermal resistance junction to ambient air (3) Thermal resistance junction to leads Operating junction and storage temperature range Symbol PPPM IPPM PM(AV) IFSM RJA RJL TJ, TSTG Value Minimum 600 See Next Table 5.0 100 100 20 -65 to +150 Unit W A W A C/W C/W C
Notes: (1) Non-repetitive current pulse, per Fig.3 and derated above TA = 25C per Fig. 2 (2) Mounted on 0.2 x 0.2" (5.0 x 5.0mm) copper pads to each terminal (3) Mounted on minimum recommended pad layout
Document Number 88385 03-May-02
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SM6T Series
Vishay Semiconductors
formerly General Semiconductor
Electrical Characteristics Ratings at 25C ambient temperature unless otherwise specified.
Type(1) Device Marking Code UNI BI Breakdown Voltage VBR @ IT(2) IT(V) Min Max Test Current (mA) Standoff Voltage VRM (V) Leakage Current (3) IRM@VRM (A) Clamping Voltage VC @ IPP 10/1000s (V) (A) Clamping Voltage VC @ IPP 8/20s (V) (A) T Max 0-4/OC
SM6T6V8A SM6T7V5A SM6T10A SM6T12A SM6T15A SM6T18A SM6T22A SM6T24A SM6T27A SM6T30A SM6T33A SM6T36A SM6T39A SM6T68A SM6T100A SM6T150A SM6T200A SM6T220A
KE7 KK7 KT7 KX7 LG7 LM7 LT7 LV7 LX7 ME7 MG7 MK7 MM7 NG7 NV7 PK7 PR7 PR8
KE7 AK7 AT7 AX7 LG7 BM7 BT7 LV7 BX7 CE7 MG7 CK7 CM7 NG7 NV7 PK7 PR7 PR8
6.45 7.13 9.50 11.4 14.3 17.1 20.9 22.8 25.7 28.5 31.4 34.2 37.1 64.6 95.0 143 190 209
7.14 7.88 10.5 12.6 15.8 18.9 23.1 25.2 28.4 31.5 34.7 37.8 41.0 71.4 105 158 210 231
10 10 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0
5.80 6.40 8.55 10.2 12.8 15.3 18.8 20.5 23.1 25.6 28.2 30.8 33.3 58.1 85.5 128 171 188
1000 500 10.0 5.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0
10.5 11.3 14.5 16.7 21.2 25.2 30.6 33.2 37.5 41.5 45.7 49.9 53.9 92.0 137 207 274 328
57.0 53.0 41.0 36.0 28.0 24.0 20.0 18.0 16.0 14.5 13.1 12.0 11.1 6.50 4.40 2.90 2.20 2.00
13.4 14.5 18.6 21.7 27.2 32.5 39.3 42.8 48.3 53.5 59.0 64.3 69.7 121 178 265 353 388
298 276 215 184 147 123 102 93 83 75 68 62 57 33 22.5 15 11.3 10.3
5.7 6.1 7.3 7.8 8.4 8.8 9.2 9.4 9.6 9.7 9.8 9.9 10.0 10.4 10.6 10.8 10.8 10.8
Notes: (1) For bi-directional devices add suffix "CA". (2) VBR measured after IT applied for 300s square wave pulse. (3) For bipolar devices with VR=10 Volts or under, the IT limit is doubled.
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Document Number 88385 03-May-02
SM6T Series
Vishay Semiconductors
formerly General Semiconductor
Ratings and Characteristic Curves (TA = 25C unless otherwise noted)
Fig. 1 - Peak Pulse Power Rating Curve
Peak Pulse Power (PPP) or Current (IPP) Derating in Percentage, %
100 100
Fig. 2 - Pulse Derating Curve
PPPM -- Peak Pulse Power (kW)
75
10
50
1 0.2 x 0.2" (0.5 x 0.5mm) Copper Pad Areas 0.1 0.1s 1.0s 10s 100s 1.0ms 10ms
25
0
0
25
50
75
100
125
150
175
200
td -- Pulse Width (sec.)
TA -- Ambient Temperature (C)
Fig. 3 - Pulse Waveform
150 6,000
Fig. 4 - Typical Junction Capacitance
CJ -- Junction Capacitance (pF)
Measured at Zero Bias
IPPM -- Peak Pulse Current, % IRSM
tr = 10sec. Peak Value IPPM
100
TJ = 25C Pulse Width (td) is defined as the point where the peak current decays to 50% of IPPM
1,000
Half Value -- IPP 2 IPPM 50 10/1000sec. Waveform as defined by R.E.A.
100
VR, Measured at Stand-Off Voltage, VWM Uni-Directional Bi-Directional TJ = 25C f = 1.0MHz Vsig = 50mVp-p 100 200
td 0 0 1.0 2.0 3.0 4.0 10 1 10
t -- Time (ms)
VWM -- Reverse Stand-Off Voltage (V)
Fig. 5 - Typical Transient Thermal Impedance
IFSM -- Peak Forward Surge Current (A)
100 200
Fig. 6 - Maximum Non-Repetitive Peak Forward Surge Current
8.3ms Single Half Sine-Wave (JEDEC Method) Unidirectional Only 100
Transient Thermal Impedance (C/W)
10
1.0
0.1 0.001
10 0.01 0.1 1 10 100 1000 1 10 100
tp -- Pulse Duration (sec)
Number of Cycles at 60HZ
Document Number 88385 03-May-02
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